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PACKAGED MEDIUM POWER PHEMT * FEATURES 23 dBm Output Power at 1-dB Compression at 15 GHz 11.5 dB Power Gain at 15 GHz 50% Power-Added Efficiency
LP6836P70
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DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 m x 360 m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25C*
Parameter Saturated Drain-Source Current** Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| Test Conditions VDS = 2 V; VGS = 0 V VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; PIN = 20 dBm VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2 mA IGS = mA -0.25 -11 70 Min 80 22 10.5 23 12 50 190 95 1 -0.8 -15 15 -2.0 Typ Max 125 Units mA dBm dB % mA mS A V V
Gate-Drain Breakdown |VBDGD| IGD = 2 mA -12 -16 V Voltage Magnitude *frequency=15 GHz, unless otherwise noted **Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70-2 = 96-105 mA, and LP6836P70-3 = 106-125 mA
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01 Email: sales@filss.com
PACKAGED MEDIUM POWER PHEMT * ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: * * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- TAmbient = 22 3 C -65 Min Max 7 -4 IDSS 18 150 175 175 1.0 Units V V mA mA mW C C W
LP6836P70
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Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25C: PTOT= 1.0W - (.0036W/C) x THS where THS = heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
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HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
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Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01 Email: sales@filss.com
PACKAGED MEDIUM POWER PHEMT * PACKAGE OUTLINE
(dimensions in mils)
LP6836P70
All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/22/01 Email: sales@filss.com

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